publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd 15hvf1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w description RD15HVF1 is a mos fet type transistor specifically designed for vhf/uhf high power amplifiers applica - tions. features high power and high gain: pout> 15 w, gp>1 4 db @vdd=12.5v,f=175mhz pout> 15 w, gp> 7 db @vdd=12.5v,f=520mhz high efficiency: 60%typ. on vhf band high efficiency: 55%typ. on uhf band application for output stage of high power amplifiers in vhf/uhf band mobile radi o sets. rohs compliant RD15HVF1 - 101 is a rohs compliant products. rohs compliance is indicate by the letter ? g ? after the lot marking. this product include the lead in high melting temperature type solders. however, it is applicable to the following exce ptions of rohs directions. 1.lead in high melting temperature type solders(i.e.tin - lead solder alloys containing more than85% lead.) outline drawing note: torelance of no designation means typical value. dimension in mm. 0.5+0.10/-0.15 pins 1:gate 2:source 3:drain 1.3+/-0.4 1 2 . 3 m i n 2 . 5 9.5max 5deg 2 . 5 4 . 5 + / - 0 . 5 3 . 1 + / - 0 . 6 3.6+/-0.2 0.8+0.10/-0.15 1.2+/-0.4 2 9.1+/-0.7 1 2 . 3 + / - 0 . 6 9 + / - 0 . 4 4 . 8 m a x 1 3 . 2 + / - 0 . 4 3 2
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 2 absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 30 v v gss gate to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 48 w pin input power zg=zl=50 ? 1.5(note2) w id drain current - 4 a t ch channel temperature - 150 c tstg storage temperature - - 40 to + 150 c rth j - c the rmal resistance junction to case 2.6 c/w note 1: above parameters are guaranteed independently. note 2 : over 300mhz use spec is 6w electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss zero gate voltage drain current v ds =17v, v gs =0v - - 100 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 u a v th gate t hreshold voltage v ds =1 2 v, i ds =1ma 1.5 2.0 2.5 v pout 1 output power v dd =12.5v, pin= 0.6 w, 15 18 - w ? d 1 drain efficienc y f=175mhz ,idq=0.5a 55 60 - % pout 2 output power v dd =12.5v, pin= 3 w, 15 18 - w ? d 2 drain efficiency f=520mhz ,idq=0.5a 50 55 - % load vswr tolerance v dd =15.2v,po=15w(pincontrol) f=175mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =15.2v,po=15w(pincontrol) f=520mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 3 typical characteristics channnel dissipation vs. ambient temperature 0 20 40 60 80 100 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) vds-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=4v vgs=3v vgs=10v vds vs. ciss characteristics 0 20 40 60 80 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25c f=1mhz vgs-ids characteristics 0 2 4 6 8 10 0 2 4 6 8 10 vgs(v) i d s ( a ) ta=+25c vds=10v
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 4 typical characteristics vdd-po characteristics 0 5 10 15 20 25 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) po idd ta=25c f=175mhz pin=0.6w idq=0.5a zg=zi=50 ohm pin-po characteristics 0 5 10 15 20 25 0 1 2 3 4 5 6 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=25c f=520mhz vdd=12.5v idq=0.5a vdd-po characteristics 0 5 10 15 20 25 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) po idd ta=25c f=520mhz pin=3w idq=0.5a zg=zi=50 ohm pin-po characteristics 0 5 10 15 20 25 0.0 0.5 1.0 1.5 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=25c f=175mhz vdd=12.5v idq=0.5a pin-po characteristics 0 10 20 30 40 50 0 10 20 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=175mhz vdd=12.5v idq=0.5a po gp pin-po characteristics 0 10 20 30 40 50 0 10 20 30 40 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=520mhz vdd=12.5v idq=0.5a po gp
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 5 typical characteristics test circuit(f=175mhz) RD15HVF1 175mhz l2:5turns,i.d6mm,d1.6mm p=1 silver plateted copper wire l2 c3:2200pf,330uf in parallel c3 c2:2200pf*2 in parallel l1 9.1kohm 100 62 7 82pf 25pf dimensions:mm 56pf rf-in vdd vgg 100ohm l1:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire c1 rf-out c2 c1:2200pf 10uf in parallel note:board material ptfe substrate micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm 74 100 7 22 45 l3 8.2kohm 10pf 25pf 25pf 42 40 12 73 25pf 25pf 56pf 95 92 25pf 25pf l3:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire vgs-ids characteristics 2 0 2 4 6 8 10 0 2 4 6 8 10 vgs(v) i d s ( a ) vds=10v tc=-25~+75c -25c +75c +25c
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 6 test circuit(f=520mhz) RD15HVF1 520mhz l2:2turns,i.d6mm,d1.6mm p=1 silver plateted copper wire l2 c3:2200pf,330uf in parallel c3 c2:2200pf*2 in parallel l1 100 7 56pf dimensions:mm 56pf rf-in vdd vgg 100ohm l1:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire c1 rf-out c2 c1:2200pf 10uf in parallel note:board material ptfe substrate micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm 100 7 90 l3 8.2kohm 5pf 15pf 10pf 90 12pf l3:4turns,i.d6mm,d1.6mm p=1 silver plateted copper wire 9.1kohm
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 7 input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditi ons 175 2.34 - j8.01 3.06+j0.74 po= 15 w, vdd=12.5v,pin= 0.6 w 520 5.42+j9.22 6.02+j12.34 po= 15 w, vdd=12.5v,pin= 3.0 w zo=50ohm f=175mhz zin f=175mhz zout f=520mhz zin f=520mhz zout
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 8 RD15HVF1 s-parameter data (@vdd=12.5v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 50 0.717 -145.9 23.274 101.8 0.023 26.0 0.556 -130.2 100 0.726 -163.9 12.054 85.7 0.024 27.7 0.547 -150.4 150 0.744 -171.1 8.049 74.7 0.025 36.1 0.560 -157.8 175 0.748 -173.6 6.804 70.2 0.025 41.8 0.571 -160.1 200 0.755 -175.9 5.886 66.3 0.026 48.1 0.588 -161.8 250 0.770 -179.0 4.622 58.6 0.030 57.7 0.625 -164.3 300 0.787 177.6 3.731 51.5 0.036 65.3 0.647 -167.5 350 0.804 174.6 3.092 45.3 0.044 70.3 0.683 -170.9 400 0.821 171.2 2.623 39.1 0.053 73.5 0.716 -173.7 450 0.838 168.2 2.229 33.2 0.062 74.6 0.734 -176.8 500 0.849 165.1 1.938 28.3 0.072 73.9 0.765 179.4 520 0.854 163.7 1.845 26.1 0.076 73.9 0.777 178.0 550 0.862 161.7 1.695 22.9 0.082 72.6 0.788 176.3 800 0.900 145.0 0.971 4.2 0.135 62.8 0.859 159.0 850 0.904 141.3 0.864 0.0 0.143 59.6 0.870 155.7 900 0.909 137.9 0.790 -1.4 0.153 57.8 0.877 152.4 950 0.910 134.6 0.738 -4.4 0.163 54.8 0.880 149.0 1000 0.910 131.2 0.662 -6.8 0.170 51.4 0.886 145.7 1050 0.911 127.5 0.612 -8.4 0.178 49.4 0.892 142.1 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > RD15HVF1 rohs compliance, silicon mosfet power transistor, 175mhz520mhz,15w publication date : oct 2011 9 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
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